BFR 182W H6327 Datasheet

BFR 182W H6327

Datasheet specifications

Datasheet's name BFR 182W H6327
File size 76.363 KB
File type pdf
Number of pages 6

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies BFR 182W H6327
  • Transistor Type: -
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 35mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 8GHz
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,8V
  • Collector Cut-Off Current (Icbo): 1nA
  • Collector-Emitter Breakdown Voltage (Vceo): 12V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
  • Package: SOT-323-3
  • Manufacturer: Infineon Technologies

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